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Normalise Transistor_FET fields and fix stack numbering errors

I noticed that many of the Transistor_FET symbols have quite messy and inconsistent fields - mostly the footprint and datasheet, but also sometimes the ref des and value.

This makes it annoying to flip though the library, and also can obscure the details (e.g. the arrows and diodes in FET symbols). It also means that derivative symbols may inherit a mishmash of fields rather than always defaulting to the "most normal" one.

I unified them all to the most common layout:

2023-12-24_133709_1125x599_screenshot.png

Whereas before it was many things, e.g., but not limited to:

2023-12-24_133751_621x537_screenshot.png 2023-12-24_133759_658x492_screenshot.png 2023-12-24_133807_788x308_screenshot.png

2023-12-24_133816_686x597_screenshot.png 2023-12-24_133833_900x429_screenshot.png

It is an annoyingly large diff and the (at ... is not on a new line which makes it a bit hard to parse visually, but the +896 -896 in the diffstat shows only lines modified, not added or removed.

It should also not threaten merge conflicts with outstanding MRs as it only changes a few lines in affects symbols, not including the start or end of the symbol s-expression markup.

Stack numbering

In a separate commit, several instances of KLC4.3 stack numbering ("lower number should be visible") violations are fixed:

  • FDC6330L
  • FDS6890A
  • IRF7309IPBF (both units)
  • IRF7324
  • IRF7404
  • IRF7606PBF
  • IRF7607PBF
  • IRF8721PBF

KLC violations

  • All are pre-existing:
    • mostly S3.1 (not centred) - not unexpected for FETs
    • a few S4.5 "missing pins" which are intentional because the packages either don't have those pins, or they're NC.
Edited by John Beard

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