[New Device] Corsair Vengeance RGB 32GB 6000MHz C36 (CMH32GX5M2D6000C36)
Name of device:
Corsair Vengeance RGB 32GB 6000MHz C36 (CMH32GX5M2D6000C36)
Link to manufacturer's product page:
Please select what type of device/interface the device uses:
ID information:
Unsure how to get specific details on RAM modules, but here is the output from HWINFO
HWiNFO64 Version 7.30-4870
DESKTOP-RS7F3D0 -----------------------------------------------------------
[Current Computer]
[Operating System]
Memory --------------------------------------------------------------------
[General Information]
Total Memory Size: 32 GBytes
Total Memory Size [MB]: 32768
[Current Performance Settings]
Maximum Supported Memory Clock: 2800.0 MHz
Current Memory Clock: 2994.6 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 36-36-36-76
Memory Channels Supported: 2
Memory Channels Active: 2
Command Rate (CR): 1T
Read to Read Delay (tRDRD_SC) Same Chipselect: 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 8T
Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group: 8T
Read to Read Delay (tRDRD_DD) Different DIMM: 8T
Write to Write Delay (tWRWR_SC) Same Chipselect: 1T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 23T
Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group: 15T
Write to Write Delay (tWRWR_DD) Different DIMM: 15T
Read to Write Delay (tRDWR): 21T
Write to Read Delay (tWRRD): 8T
Read to Precharge Delay (tRTP): 12T
Write to Precharge Delay (tWTP): 101T
Write Recovery Time (tWR): 90T
Row Cycle Time (tRC): 112T
Refresh Cycle Time (tRFC): 884T
Four Activate Window (tFAW): 40T
Row: 1 [P0 CHANNEL A/DIMM 1] - 16 GB PC5-48000 DDR5 SDRAM Corsair CMH32GX5M2D6000C36
[General Module Information]
Module Number: 1
Module Size: 16 GBytes
Memory Type: DDR5 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 3000.0 MHz (DDR5-6000 / PC5-48000)
Module Manufacturer: Corsair
Module Part Number: CMH32GX5M2D6000C36
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: Year: 2022, Week: 34
Module Manufacturing Location: 0
SDRAM Manufacturer: Samsung
DRAM Steppping: B-Die (4.2)
Error Check/Correction: None
[Module Characteristics]
Rank Mix: Symmetrical
Row Address Bits: 16
Column Address Bits: 10
Module Density: 16384 Mb
Dies Per Package: 1
Device Width: x8
Number Of Bank Groups: 8
Banks Per Group: 4
Number Of Ranks: 1
Module Device Width: x4
Channels Per DIMM: x2
Primary Bus Width: x32
Bus Extension: None
Module Voltage (VDD): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VDDQ): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VPP): Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
Temperature Grade: Commercial (0 to 85 C)
Post Package Repair: 1 Row / BG
Soft Post Package Repair: Supported
BL32: Not Supported
Minimum SDRAM Cycle Time (tCKAVGmin): 0.41600 ns (2400 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.00000 ns
CAS# Latencies Supported: 22, 28, 30, 32, 36, 40, 42
Minimum CAS# Latency Time (tAAmin): 16.666 ns
Minimum RAS# to CAS# Delay (tRCDmin): 16.666 ns
Minimum Row Precharge Time (tRPmin): 16.666 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 2400.0 MHz: 41-41-41-77
Supported Module Timing at 2200.0 MHz: 37-37-37-71
Supported Module Timing at 1800.0 MHz: 31-31-31-58
Minimum Active to Active/Refresh Time (tRCmin): 48.666 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbmin): 130.000 ns
Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
SPD Manufacturer: IDT
SPD Type: SPD5118
SPD Steppping: 1.2
PMIC0 Device: Present
PMIC0 Manufacturer: Anpec Electronics
PMIC0 Device Type: PMIC5100
PMIC0 Stepping: 3.6
PMIC0 Type: Small PMIC (Low Current)
PMIC0 Secure Mode: Disabled
Thermal Sensor 0: Not Present
Thermal Sensor 1: Not Present
DRAM Temperature Grade: Extended (XT) : 0 - 95 C
Heat Spreader: Present
Module Nominal Height: 44 - 45 mm
Module Maximum Thickness (Front): 3 - 4 mm
Module Maximum Thickness (Back): 3 - 4 mm
[Intel Extreme Memory Profile (XMP)]
XMP Version: 3.0
XMP Revision: 1.2
Number of PMICs: 1
XMP(OC) PMIC: Not Supported
PMIC OC: Disabled
PMIC voltage default step size: 5 mV
[Enthusiast/Certified Profile [Enabled]]
Profile Name: Profile 1
Recommended Channel Config: 1 DIMM per Channel
Module VDD Voltage Level: 1.35 V
Module VPP Voltage Level: 1.80 V
Module VDDQ Voltage Level: 1.35 V
Memory Controller Voltage Level: 1.20 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.33300 ns (3000 MHz)
CAS# Latencies Supported: 22, 26, 28, 30, 32, 36, 40, 42, 46, 48, 50, 54
Minimum CAS# Latency Time (tAAmin): 11.988 ns
Minimum RAS# to CAS# Delay (tRCDmin): 11.988 ns
Minimum Row Precharge Time (tRPmin): 11.988 ns
Minimum Active to Precharge Time (tRASmin): 25.308 ns
Supported Module Timing at 3000.0 MHz: 36-36-36-76
Supported Module Timing at 2600.0 MHz: 32-32-32-66
Supported Module Timing at 2400.0 MHz: 29-29-29-61
Supported Module Timing at 2200.0 MHz: 27-27-27-56
Supported Module Timing at 1800.0 MHz: 22-22-22-46
Minimum Active to Active/Refresh Time (tRCmin): 37.296 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsb): 130.000 ns
Minimum Minimum Write Recovery Time (tWRmin): 30.000 ns
System Command Rate Mode: 0N
Real-Time Memory Frequency Overclocking: Supported
Intel Dynamic Memory Boost: Supported
Minimum Read to Read Command Delay Time, Same Bank Group (tCCD_Lmin): 5.000 ns
Minimum Write to Write Command Delay Time, Same Bank Group (tCCD_L_WRmin): 20.000 ns
Minimum Write to Write Command Delay Time, Second Write not RMW, Same Bank Group (tCCD_L_WR2min): 10.000 ns
Minimum Write to Read Command Delay Time, Same Bank Group (tCCD_L_WTRmin): 10.000 ns
Minimum Write to Read Command Delay Time, Different Bank Group (tCCD_S_WTRmin): 2.500 ns
Minimum Active to Active Command Delay Time, Same Bank Group (tRRD_Lmin): 5.000 ns
Minimum Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Four Activate Window (tFAWmin): 10.666 ns
Row: 3 [P0 CHANNEL B/DIMM 1] - 16 GB PC5-48000 DDR5 SDRAM Corsair CMH32GX5M2D6000C36
[General Module Information]
Module Number: 3
Module Size: 16 GBytes
Memory Type: DDR5 SDRAM
Module Type: Unbuffered DIMM (UDIMM)
Memory Speed: 3000.0 MHz (DDR5-6000 / PC5-48000)
Module Manufacturer: Corsair
Module Part Number: CMH32GX5M2D6000C36
Module Revision: 0.0
Module Serial Number: N/A
Module Manufacturing Date: Year: 2022, Week: 34
Module Manufacturing Location: 0
SDRAM Manufacturer: Samsung
DRAM Steppping: B-Die (4.2)
Error Check/Correction: None
[Module Characteristics]
Rank Mix: Symmetrical
Row Address Bits: 16
Column Address Bits: 10
Module Density: 16384 Mb
Dies Per Package: 1
Device Width: x8
Number Of Bank Groups: 8
Banks Per Group: 4
Number Of Ranks: 1
Module Device Width: x4
Channels Per DIMM: x2
Primary Bus Width: x32
Bus Extension: None
Module Voltage (VDD): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VDDQ): Nominal: 1.1V, Operable: 1.1V, Endurant: 1.1V
Module Voltage (VPP): Nominal: 1.8V, Operable: 1.8V, Endurant: 1.8V
Temperature Grade: Commercial (0 to 85 C)
Post Package Repair: 1 Row / BG
Soft Post Package Repair: Supported
BL32: Not Supported
Minimum SDRAM Cycle Time (tCKAVGmin): 0.41600 ns (2400 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.00000 ns
CAS# Latencies Supported: 22, 28, 30, 32, 36, 40, 42
Minimum CAS# Latency Time (tAAmin): 16.666 ns
Minimum RAS# to CAS# Delay (tRCDmin): 16.666 ns
Minimum Row Precharge Time (tRPmin): 16.666 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 2400.0 MHz: 41-41-41-77
Supported Module Timing at 2200.0 MHz: 37-37-37-71
Supported Module Timing at 1800.0 MHz: 31-31-31-58
Minimum Active to Active/Refresh Time (tRCmin): 48.666 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbmin): 130.000 ns
Minimum Refresh Recovery Time Delay (tRFC1dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFC2dlrmin): 0.000 ns
Minimum Refresh Recovery Time Delay (tRFCsbdlrmin): 0.000 ns
SPD Manufacturer: IDT
SPD Type: SPD5118
SPD Steppping: 1.2
PMIC0 Device: Present
PMIC0 Manufacturer: Anpec Electronics
PMIC0 Device Type: PMIC5100
PMIC0 Stepping: 3.6
PMIC0 Type: Small PMIC (Low Current)
PMIC0 Secure Mode: Disabled
Thermal Sensor 0: Not Present
Thermal Sensor 1: Not Present
DRAM Temperature Grade: Extended (XT) : 0 - 95 C
Heat Spreader: Present
Module Nominal Height: 44 - 45 mm
Module Maximum Thickness (Front): 3 - 4 mm
Module Maximum Thickness (Back): 3 - 4 mm
[Intel Extreme Memory Profile (XMP)]
XMP Version: 3.0
XMP Revision: 1.2
Number of PMICs: 1
XMP(OC) PMIC: Not Supported
PMIC OC: Disabled
PMIC voltage default step size: 5 mV
[Enthusiast/Certified Profile [Enabled]]
Profile Name: Profile 1
Recommended Channel Config: 1 DIMM per Channel
Module VDD Voltage Level: 1.35 V
Module VPP Voltage Level: 1.80 V
Module VDDQ Voltage Level: 1.35 V
Memory Controller Voltage Level: 1.20 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.33300 ns (3000 MHz)
CAS# Latencies Supported: 22, 26, 28, 30, 32, 36, 40, 42, 46, 48, 50, 54
Minimum CAS# Latency Time (tAAmin): 11.988 ns
Minimum RAS# to CAS# Delay (tRCDmin): 11.988 ns
Minimum Row Precharge Time (tRPmin): 11.988 ns
Minimum Active to Precharge Time (tRASmin): 25.308 ns
Supported Module Timing at 3000.0 MHz: 36-36-36-76
Supported Module Timing at 2600.0 MHz: 32-32-32-66
Supported Module Timing at 2400.0 MHz: 29-29-29-61
Supported Module Timing at 2200.0 MHz: 27-27-27-56
Supported Module Timing at 1800.0 MHz: 22-22-22-46
Minimum Active to Active/Refresh Time (tRCmin): 37.296 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 295.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 160.000 ns
Minimum Refresh Recovery Time Delay (tRFCsb): 130.000 ns
Minimum Minimum Write Recovery Time (tWRmin): 30.000 ns
System Command Rate Mode: 0N
Real-Time Memory Frequency Overclocking: Supported
Intel Dynamic Memory Boost: Supported
Minimum Read to Read Command Delay Time, Same Bank Group (tCCD_Lmin): 5.000 ns
Minimum Write to Write Command Delay Time, Same Bank Group (tCCD_L_WRmin): 20.000 ns
Minimum Write to Write Command Delay Time, Second Write not RMW, Same Bank Group (tCCD_L_WR2min): 10.000 ns
Minimum Write to Read Command Delay Time, Same Bank Group (tCCD_L_WTRmin): 10.000 ns
Minimum Write to Read Command Delay Time, Different Bank Group (tCCD_S_WTRmin): 2.500 ns
Minimum Active to Active Command Delay Time, Same Bank Group (tRRD_Lmin): 5.000 ns
Minimum Read to Precharge Command Delay Time (tRTPmin): 7.500 ns
Minimum Four Activate Window (tFAWmin): 10.666 ns
Please attach screenshots of the device's official control application here:
Please attach device captures here:
Checklist for Step2
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Name of device -
A link to the vendors product page has been included -
The transport bus has been identified and the appropriate label added to the issue. -
The device ID's have been included for USB or PCI -
Screenshots of the OEM Application are included -
There is either, appropriate code examples linked or suitable device captures attached
Edited by Azsry